Luminescent properties of GaN films grown on porous silicon substrate-Reference-Cited by-同舟云学术

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Luminescent properties of GaN films grown on porous silicon substrate

Published:2010-03 Issue:3 Volume:130 Page:399-403
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Matoussi A.,Ben Nasr F.,Boufaden T.,Salh R.,Fakhfakh Z.,Guermazi S.,ElJani B.,Fitting H.-J.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference36 articles.

1. Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE

2. Gallium nitride heterostructures on 3D structured silicon

3. Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

4. GaN-based optoelectronics on silicon substrates

5. Improvement of the crystallinity of GaN epitaxial layers grown on porous Si (100) layers by using a two-step method

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1. Cathodoluminescence of polarization-induced energy states at AlGaN/GaN interface;Journal of Physics D: Applied Physics;2024-08-27

2. Controlled nano-roughening of the GaN surface by post-growth thermal annealing;Applied Surface Science;2024-05

3. Preparing GaN nanowires on Al₂O₃ substrate without catalyst and its optical property;Acta Physica Sinica;2020

4. Growth and characterization of GaN nanostructures under various ammoniating time with fabricated Schottky gas sensor based on Si substrate;Superlattices and Microstructures;2018-05

5. Heteroepitaxy on Porous Silicon;Handbook of Porous Silicon;2018

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