Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide-Reference-Cited by-同舟云学术

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Charge trapping phenomena in high-efficiency metal-oxide-silicon light-emitting diodes with ion-implanted oxide

Published:2006-12 Issue:2 Volume:121 Page:213-216
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Nazarov A.,Osiyuk I.,Tyagulskii I.,Lysenko V.,Prucnal S.,Sun J.,Skorupa W.,Yankov R.A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference9 articles.

1. Electroluminescence properties of SiOx layers implanted with rare earth ions

2. Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters

3. Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection

4. Injection spectroscopy of localized states in thin insulating layers on semiconductor surfaces

5. Generation of positive and negative charges under Fowler–Nordheim injection and breakdown

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1. Enhancement of carrier mobility in thin Ge layer by Sn co-doping;Semiconductor Science and Technology;2016-09-13

2. The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments;Journal of Applied Physics;2014-09-28

3. Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition;Applied Physics Letters;2014-06-23

4. Rare Earth Implanted MOS Structures: Advantages and Drawbacks for Optoelectronic Applications;Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting;2014

5. Thermal Effect on Electroluminescence Quenching in SiO2 with Ge and ReOX Nanoclusters;ECS Transactions;2012-04-27

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