Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1604934
Reference24 articles.
1. Electroluminescence and photoluminescence of Ge+-implanted SiO2 films thermally grown on crystalline silicon
2. Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers
3. Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements
4. Efficient Blue Light Emission from Silicon: The First Integrated Si-Based Optocoupler
5. Centroid location of implanted ions in the SiO2layer of MOS structures using the photoI‐Vtechnique)
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