Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition-Reference-Cited by-同舟云学术

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Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition

Published:2014-06-23 Issue:25 Volume:104 Page:251113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rebohle L.¹,Braun M.¹,Wutzler R.¹,Liu B.²,Sun J. M.²,Helm M.¹,Skorupa W.¹

Affiliation:

1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany

2. Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics, Nankai University, Tianjin 300071, China

Funder

Chinese '973' project

National Natural Science Foundation of China NSFC

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference22 articles.

1. New trends in design of electroluminescent rare earth metallo-complexes for OLEDs

2. Hot electron impact excitation cross-section of Er3+ and electroluminescence from erbium-implanted silicon metal-oxide-semiconductor tunnel diodes

3. Light emitting devices based on silicon nanostructures

4. Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters

5. Rare-earth-doped films prepared by plasma-enhanced chemical vapour deposition

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