Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation-Reference-Cited by-同舟云学术

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Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation

Published:2013-02 Issue: Volume:80 Page:10-13
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Baek Chang-Ki,Kang Daegun,Kim JeongSik,Jin Bo,Rim Taiuk,Park Sooyoung,Meyyappan M.,Jeong Yoon-Ha,Lee Jeong-Soo

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Phase change materials and their application to random access memory technology;Raoux;Microelectron Eng,2008

2. Phase change materials;Raoux;Annu Rev Mater Res,2009

3. Two generations of phase-change memory devices: differences and common problems;Popov;Phys Status Solidi B,2009

4. Characteristics of chalcogenide nonvolatile memory nano-cell-element based on Sb2Te3 material;Liu;Microelectron Eng,2005

5. Investigation of electrical characteristics of the In3Sb1Te2 ternary alloy for application in phase-change memory;Kim;Phys Status Solidi RRL,2009

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5. Applications of Phase Change Materials in Electrical Regime From Conventional Storage Memory to Novel Neuromorphic Computing;IEEE Access;2020

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