Investigation of electrical characteristics of the In3 Sb1 Te2 ternary alloy for application in phase-change memory-Reference-Cited by-同舟云学术

Investigation of electrical characteristics of the In3 Sb1 Te2 ternary alloy for application in phase-change memory

Published:2009-03-13 Issue:4 Volume:3 Page:103-105
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:phys. stat. sol. (RRL)

Author:

Kim Eun Tae,Lee Jeong Yong,Kim Yong Tae

Funder

Samsung Electronics and the Korean Ministry of Knowledge and Economy (MKE) under the National Research Project of Phase-Change Random Access Memory Development

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.200903049/fullpdf

Reference17 articles.

1. Materials aspects in phase change optical recording

2. Crystallization behavior of sputter-deposited amorphous Ge2Sb2Te5 thin films

3. Laser induced crystallization of amorphous Ge2Sb2Te5 films

4. Crystal structure and atomic arrangement of the metastable Ge2Sb2Te5 thin films deposited on SiO2∕Si substrates by sputtering method

5. Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications

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