Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications-Reference-Cited by-同舟云学术

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Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications

Published:2007-01-08 Issue:2 Volume:90 Page:023101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Suh Dong-Seok,Lee Eunhye,Kim Kijoon H. P.,Noh Jin-Seo,Shin Woong-Chul,Kang Youn-Seon,Kim Cheolkyu,Khang Yoonho,Yoon H. R.,Jo W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2430481

Reference16 articles.

1. Introduction to flash memory

2. Proceedings of the 2005 IEEE Custom Integrated Circuits Conference;Kim K.,2005

3. Understanding the phase-change mechanism of rewritable optical media

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