Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance

Author:

Manoi Athikom,Pomeroy James W.,Lossy Richard,Pazirandeh Reza,Würfl Joachim,Uren Michael J.,Martin Trevor,Kuball Martin

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Wu Y-F, Moore M, Saxler A, Wisleder T, Parikh P. 40-W/mm double field-plated GaN HEMTs. In: Proc IEEE DRC Conf Dig; 2006. p. 151–2.

2. Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs;Rajasingam;IEEE Electron Dev Lett,2004

3. Lee S, Vetury R, Brown JD, Gibb SR, Cai WZ, Sun J, et al. Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications. In: Proc IEEE Reliability physics symposium; 2008. p. 446–9.

4. Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects;Heller;Microelectron Reliab,2008

5. Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy;Kuball;Appl Phys Lett,2003

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