Direct-Laser-Writing Manipulating α/δ-FAPbI<sub>3</sub> Array Enables Low-Crosstalk Terahertz Sensing and Imaging-Reference-Cited by-同舟云学术

Direct-Laser-Writing Manipulating α/δ-FAPbI₃ Array Enables Low-Crosstalk Terahertz Sensing and Imaging

Published:2023-08-03 Issue:8 Volume:10 Page:2755-2764
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Li Junyu¹,Zeng Xiongzhi²,Ma Teng¹,Liang Lumeng¹,Chen Jun¹^ORCID,Xu Pengfei³,Xu Biao³^ORCID,Li Zhenyu²^ORCID,Han Zeyao¹,Liu Jiaxin¹,Zou Yousheng¹^ORCID,Lei Wei⁴,Xu Xiaobao¹⁴^ORCID

Affiliation:

1. School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

2. Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China

3. School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China

4. Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210009, China

Funder

Natural Science Foundation of Jiangsu Province

Shuangchuang Program of Jiangsu Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.3c00458

Reference65 articles.

1. Thermal crosstalk simulation and measurement of linear terahertz detector arrays

2. Cutting-edge terahertz technology

3. Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

4. Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection

5. GaAs/InGaAs quantum well infrared photodetector with a cutoff wavelength at 35 μm

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