Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers-Reference-Cited by-同舟云学术

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Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers

Published:2023-11 Issue: Volume:150 Page:115156
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Strenaer R.,Guhel Y.,Gaquière C.,Boudart B.

Funder

European Commission

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. GaN Integration Technology, an Ideal Candidate for High-Temperature Applications: A Review

2. Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review

3. Measurement of Self-Heating Temperature in AlGaN/GaN HEMTs by Using Cerium Oxide Micro-Raman Thermometers

4. Self-heating temperature measurement in AlInN/GaN HEMTs by using CeO2 and TiO2 micro-Raman thermometers

5. Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance

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