Design and optimization of junction termination extension (JTE) for 4H–SiC high voltage Schottky diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference42 articles.
1. SiC power Schottky and PiN diodes;Singh;IEEE Trans Electron Dev,2002
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5. Design and fabrication of planar guard ring termination for high voltage SiC devices;Sheridan;Solid-State Electron,2000
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