Role of multiple delta doping in PHEMTs scaled to sub-100 nm dimensions
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference44 articles.
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3. Extremely high-speed lattice-matched InGaAs/InAlAs high electron mobility transistors with 472 GHz cutoff frequency;Shinohara;Jpn. J. Appl. Phys.,2002
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5. Scaling of pHEMTs to decanano dimensions;Kalna;VLSI Design,2001
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