Affiliation:
1. Device Modelling Group, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, Scotland
Abstract
The effect of scaling into deep decanano dimensions on the performance of pseudomorphic
high electron mobility transistors (pHEMTs) is extensively studied using
Monte Carlo simulations. The scaling of devices with gate lengths of 120, 70, 50 and
30nm is performed in both lateral and vertical directions. The devices exhibit a
significant improvement in transconductance during scaling, even though external
resistances become a limiting factor.
Funder
Engineering and Physical Sciences Research Council
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Hardware and Architecture
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献