Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency-Reference-Cited by-同舟云学术

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Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency

Published:2002-04-15 Issue:Part 2, No. 4B Volume:41 Page:L437-L439
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Shinohara Keisuke,Yamashita Yoshimi,Endoh Akira,Hikosaka Kohki,Matsui Toshiaki,Mimura Takashi,Hiyamizu Satoshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=4B/a=L437/pdf

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