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Post-process porous silicon for 5G applications

  • Published:2020-06 Issue: Volume:168 Page:107719
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Scheen Gilles,Tuyaerts Romain,Rack Martin,Nyssens Lucas,Rasson Jonathan,Nabet Massinissa,Raskin Jean-Pierre

Funder

Walloon Region

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. SiO2 interface layer effects on microwave loss of high-resistivity CPW line;Wu,1999

2. New substrate passivation method dedicated to HR SOI wafer fabrication with increased substrate resistivity;Lederer;IEEE Electron Device Lett,2005

3. Porous silicon technology for RF integrated circuit applications;Welty,1998

4. Coplanar waveguides on silicon substrate with thick oxidized porous silicon (OPS) layer;Nam;IEEE Microw Guid Wave Lett,1998

5. Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications;Kim;J Appl Phys,2003

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Circuits for 5G applications implemented in FD-SOI and RF/PD-SOI technologies;New Materials and Devices Enabling 5G Applications and Beyond;2024

2. FD-SOI and RF-SOI technologies for 5G;New Materials and Devices Enabling 5G Applications and Beyond;2024

3. SOS Pseudo-FeFETs after Furnace or Rapid Annealings and Thining by Thermal Oxidation;Solid-State Electronics;2023-11

4. GaN-on-Porous Silicon for RF Applications;2023 53rd European Microwave Conference (EuMC);2023-09-19

5. More silicon-deep in the nanovalley-;Materials Science in Semiconductor Processing;2023-08
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