Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation-Reference-Cited by-同舟云学术

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Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation

Published:2016-01 Issue: Volume:115 Page:7-11
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kao Tsung-Hsien,Chang Shoou-Jinn,Fang Yean-Kuen,Huang Po-Chin,Wang Bo-Chin,Wu Chung-Yi,Wu San-Lein

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis

2. Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise

3. Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise

4. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise

5. Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Systematical Investigation of Flicker Noise in 14 nm FinFET Devices towards Stochastic Computing Application;Micromachines;2023-11-14

2. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET;Applied Sciences;2020-08-01

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