Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation

Author:

Eminente Simone,Alessandrini Marco,Fiegna Claudio

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Low field electron and hole mobility of SOI transistors fabricated on ultra-thin silicon films for deep sub-micrometer technology application;Esseni;IEEE Trans. Electron Dev.,2001

2. Influence of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs;Koga;IEEE Trans. Electron Dev.,2002

3. Zamdmer N, Ray A, Plouchart J-O, Wagner L, Fong N, Jenkins KA, et al. A 0.13-μm SOI CMOS technology for low-power digital and RF applications VLSI Technology, 2001. Digest of Technical Papers 2001. pp. 85–6

4. Pavanello MA, Martino JA, Flandre D. Analog circuit design using graded-channel SOI nMOSFETs. In: 14th Symposium on Integrated Circuits and Systems Design, 2001. p. 130–5

5. RF characterisation of fully depleted SOI MOSFET with Si substrate removed;Chen;Electron. Lett.,2002

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