Radio Frequency Stability Performance of Double-Gate Tunnel FET
Author:
Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-0157-9_4
Reference12 articles.
1. Björk MT, Knoch J, Schmid H, Riel H, Riess W (2008) Silicon nanowire tunneling field-effect transistors. Appl Phys Lett 92(19):193504
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3. Boucart K, Ionescu AM (2007) Threshold voltage in tunnel FETs: physical definition, extraction, scaling and impact on IC design. In: ESSDERC 2007-37th European solid state device research conference, September, IEEE, pp 299–302
4. Cerdeira A, Tinoco JC, Estrada M, Raskin JP (2010) RF compact small-signal model for SOI DG-MOSFETS. In: 2010 27th international conference on microelectronics proceedings, May, IEEE, pp 391–394
5. Eminente S, Alessandrini M, Fiegna C (2004) Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation. Solid-State Electron 48(4):543–549
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