Advanced PBTI reliability with 0.69nm EOT GdHfO gate dielectric-Reference-Cited by-同舟云学术

Advanced PBTI reliability with 0.69nm EOT GdHfO gate dielectric

Published:2011-09 Issue:1 Volume:63 Page:5-7
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cho Moonju,Aoulaiche Marc,Degraeve Robin,Kaczer Ben,Kauerauf Thomas,Ragnarsson Lars-Åke,Adelmann Christoph,Elshocht Sven Van,Hoffmann Thomas Y.,Groeseneken Guido

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

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2. Scaling the MOSFET gate dielectric: from high-k to higher-k?;Frank;Microelectron Eng,2009

3. Electrical characterization of directly deposited La–Sc oxides complex for gate insulator application;Kawanago;Microelectron Eng,2007

4. Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: the role of bulk dielectrics charge;Yu;Appl Phys Lett,2008

5. Excellent frequency dispersion of thin gadolinium oxide high-k gate dielectrics;Pan;Appl Phys Lett,2005

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3. Channel Hot Carrier Degradation Mechanism in Long/Short Channel $n$-FinFETs;IEEE Transactions on Electron Devices;2013-12

4. Front End of the Line Process;Atomic Layer Deposition for Semiconductors;2013-10-19

5. Insight Into N/PBTI Mechanisms in Sub-1-nm-EOT Devices;IEEE Transactions on Electron Devices;2012-08