Channel Hot Carrier Degradation and Self-Heating Effects in FinFETs-Reference-Cited by-同舟云学术

Channel Hot Carrier Degradation and Self-Heating Effects in FinFETs

Published:2014-10-04 Issue: Volume: Page:287-307
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Container-title:Hot Carrier Degradation in Semiconductor Devices
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Author:

Cho Moonju,Bury Erik,Kaczer Ben,Groeseneken Guido

Publisher

Springer International Publishing

Link

http://link.springer.com/content/pdf/10.1007/978-3-319-08994-2_10

Reference47 articles.

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3. C. Hu, S.C. Tam, F.-C. Hsu, P.-K. Ko, T.-Y. Chan, K.W. Terrill, Hot-electron-induced MOSFET degradation – model, monitor, and improvement. IEEE J. Solid State Circuits SC-20(1), 295–305 (1985)

4. C. Guerin, V. Huard, A. Bravaix, M. Denais, J.M. Roux, F. Perrier, W. Baks, Combined effect of NBTI and channel hot carrier effects in pMOSFETs, in International Integrated Reliability Workshop (2005), pp. 10–16

5. E. Amat, T. Kauerauf, R. Degraeve, A. De Keersgieter, R. Rodríguez, M. Nafría, X. Aymerich, G. Groeseneken, Channel hot-carrier degradation in short-channel transistors with high-k/metal gate stacks. IEEE Trans. Device Mater. Reliab. 9(3), 425–430 (2009)

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