Excellent frequency dispersion of thin gadolinium oxide high-k gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2152107
Reference12 articles.
1. Electrical characterization of Al2O3 n-channel MOSFETs with aluminum gates
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5. Stable zirconium silicate gate dielectrics deposited directly on silicon
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