Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3058695
Reference12 articles.
1. Structural advantage for the EOT scaling and improved electron channel mobility by incorporating dysprosium oxide (Dy/sub 2/O/sub 3/) into HfO/sub 2/ n-MOSFETs
2. Achieving Conduction Band-Edge Effective Work Functions by $\hbox{La}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicates
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1. Atomic force microscopy and ellipsometry investigations of rare earth oxide Dy2O3 nano-layer processed by electron beam evaporation on n-GaAs substrate;Optical and Quantum Electronics;2023-12-30
2. Electrical and Dielectric Properties of a Dy2O3 MOS Capacitor;Journal of Electronic Materials;2022-01-05
3. The temperature dependence on the electrical properties of dysprosium oxide deposited on n-porous GaAs;Journal of Alloys and Compounds;2016-08
4. Temperature dependent electrical and dielectric properties of a metal/Dy2O3/n-GaAs (MOS) structure;Materials Science in Semiconductor Processing;2015-01
5. Physical and electrical characteristics of metal/Dy2O3/p-GaAs structure;Physica B: Condensed Matter;2014-07
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