Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs-Reference-Cited by-同舟云学术

Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs

Published:2006-06 Issue:6 Volume:50 Page:1012-1015
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lin H.C.,Ye P.D.,Wilk G.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

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3. GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

4. GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

5. Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

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