Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures-Reference-Cited by-同舟云学术

Early Growth Stages of Aluminum Oxide (Al2O3) Insulating Layers by Thermal- and Plasma-Enhanced Atomic Layer Deposition on AlGaN/GaN Heterostructures

Published:2021-12-29 Issue:1 Volume:4 Page:406-415
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Schilirò Emanuela¹,Fiorenza Patrick¹^ORCID,Greco Giuseppe¹^ORCID,Monforte Francesca²,Condorelli Guglielmo Guido²^ORCID,Roccaforte Fabrizio¹^ORCID,Giannazzo Filippo¹^ORCID,Lo Nigro Raffaella¹^ORCID

Affiliation:

1. Consiglio Nazionale delle Ricerche−Istituto per la Microelettronica e Microsistemi, Strada VIII n. 5-Zona Industriale, 95121 Catania, Italy

2. Department of Chemistry, University of Catania, Viale Andrea Doria n 5, 95125 Catania, Italy

Funder

Ministero dell'Istruzione, dell'Universit? e della Ricerca

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c01059

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