Reduced temperature S-parameter measurements of 400+GHz sub-micron InP DHBTs

Author:

Li James Chingwei,Hussain Tahir,Hitko Donald A.,Royter Yakov,Fields Charles H.,Milosavljevic Ivan,Thomas Stephen,Rajavel Rajesh D.,Asbeck Peter M.,Sokolich Marko

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Lateral scaling of 0.25μm InP/InGaAs SHBTs with InAs emitter cap;Hafez;Electron Lett,2004

2. InP/InGaAs SHBTs with 75nm collector and fT>500GHz;Hafez;Electron Lett,2003

3. InGaAs/InP mesa DHBTs with simultaneously high ft and fmax and low Ccb=Ic ratio;Griffith;IEEE Electron Device Lett,2004

4. Hussain T, Royter Y, Hitko D, Montes M, Milosavljevic I, Rajavel R, Thomas S, Antcliffe M, Arthur A, Boegeman Y, Li J, Sokolich M. First demonstration of sub-0.25μm-width emitter InP-DHBTs with >400GHz ft>400GHz fmax. In: IEDM technical digest; 2004.

5. Submicrometer scaling of heterojunction bipolar transistors;Rodwell;IEEE Trans Electron Dev,2001

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