Temperature-dependent DC and small signal performance of InGaAs/InP DHBT-Reference-Cited by-同舟云学术

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Temperature-dependent DC and small signal performance of InGaAs/InP DHBT

Published:2022-07 Issue: Volume:125 Page:105473
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Yan Silu,Lu Hongliang^ORCID,Qi Junjun,Cheng Wei,Zhang Yuming,Zhang Yimen

Publisher

Elsevier BV

Subject

General Engineering

Reference31 articles.

1. Towards monolithic indium phosphide (InP)-Based electronic photonic technologies for beyond 5G communication systems[J];Mukherjee;Appl. Sci.,2021

2. InP HBT technology for THz applications[C];Weimann,2020

3. InP HBT technologies for THz integrated circuits[J];Urteaga;Proc. IEEE,2017

4. DNN-based fast static on-chip thermal solver[C];Wen,2020

5. SiGe HBT compact modeling for extreme temperatures[C];Woods,2007

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Knowledge-Guided Neural Network-Based Large-Signal Model for InP HBTs With Self-Heating Effect Consideration;IEEE Transactions on Microwave Theory and Techniques;2024

2. An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT;IEEE Transactions on Device and Materials Reliability;2023-12

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