Lateral scaling of 0.25 [micro sign]m InP∕InGaAs SHBTs with InAs emitter cap
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20045962?crawler=true&mimetype=application/pdf
Reference5 articles.
1. InP∕InGaAs SHBTs with 75 nm collector and fT>500 GHz
2. Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA
3. Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reduced temperature S-parameter measurements of 400+GHz sub-micron InP DHBTs;Solid-State Electronics;2007-06
2. Investigation Into the Scalability of Selectively Implanted Buried Subcollector (SIBS) for Submicrometer InP DHBTs;IEEE Transactions on Electron Devices;2007-03
3. 200GHz InP DHBT technology using selectively implanted buried sub-collector (SIBS) for broadband amplifiers;Solid-State Electronics;2007-01
4. 12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz;Applied Physics Letters;2005-12-19
5. Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHz;Applied Physics Letters;2005-04-11
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