12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz-Reference-Cited by-同舟云学术

12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz

Published:2005-12-19 Issue:25 Volume:87 Page:252109
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hafez Walid,Snodgrass William,Feng Milton

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2149510

Reference11 articles.

1. Device Technologies for RF Front-End Circuits in Next-Generation Wireless Communications

2. Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors

3. Self-Aligned InP DHBT with<tex>$f_tau$</tex>and<tex>$f_max$</tex>Over 300 GHz in a New Manufacturable Technology

4. M. Ida, K. Kurishima, K. Ishii, and N. Watanabe, Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, San Diego, California, 9–12 November 2003, pp. 211–214.

5. W. Hafez and M. Feng, IEEE International Electron Devices Meeting, San Francisco, California, 13–15 December 2004, pp. 549–552.

Cited by 50 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Proposed equivalent circuit physics-based model of InP based double heterojunction bipolar transistors;Solid-State Electronics;2024-09

2. Effect of emitter-base spacer design on the performance of InP/GaAsSb/InP DHBTs grown by MOCVD;Physica Scripta;2024-04-02

3. Designing Transistors for Specific Applications;Synthesis Lectures on Engineering, Science, and Technology;2023-10-17

4. Terahertz Electronic Devices;Springer Handbook of Semiconductor Devices;2022-11-11

5. Material considerations for the design of 2D/3D hot electron transistors;APL Materials;2021-08-01