Investigation of nonlinear distortion in double heterojunction GaAs based pHEMT subject to frequency and temperature

Author:

Alim Mohammad A.,Ali Mayahsa M.,Rezazadeh Ali A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Electrostatic, linearity and analogue/RF performance analysis of single heterojunction GaAs HEMT;Journal of Materials Science: Materials in Electronics;2024-01

2. RF/Linearity figures of merit estimation for GaAs and GaN/SiC-based Nano-HEMTs;Micro and Nanostructures;2022-11

3. Multi-Bias and Nonlinear Distortion Analysis for GaAs Nano-HEMT: Performance Projection;2022 IEEE Global Conference on Computing, Power and Communication Technologies (GlobConPT);2022-09-23

4. Schottky contact diameter effect on the electrical properties and interface states of Ti/Au/p-AlGaAs/GaAs/Au/Ni/Au Be-doped p-type MBE Schottky diodes;Semiconductor Science and Technology;2022-04-13

5. Performance Projection of GaN HEMT: Bias and Temperature Dependent Study of 3rd-Order Intermodulation Distortion;2021 3rd International Conference on Sustainable Technologies for Industry 4.0 (STI);2021-12-18

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