Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications-Reference-Cited by-同舟云学术

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Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

Published:2021-12 Issue: Volume:186 Page:108114
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ossorio Ó.G.,Vinuesa G.,García H.,Sahelices B.,Dueñas S.,Castán H.,Ritala M.,Leskelaˇ M.,Kemell M.,Kukli K.

Funder

Estonian Research Council

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Li C, Xia Q, Springer International Publishing, Cham, 2019, pp. 791–813.

2. Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO2/p-Si tunneling junction structure

3. Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2/Pt RRAM Devices

4. Ultrastructural Characterization of the Lower Motor System in a Mouse Model of Krabbe Disease

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cu vacancy-enhanced switching stability of Cu2-xS memristor;Applied Surface Science;2024-05

2. Reliable RRAM devices utilizing sol-gel derived amorphous Ce2Ti2O7 thin films;Journal of Alloys and Compounds;2023-10

3. Improved Performance of NbOx Resistive Switching Memory by In-Situ N Doping;Nanomaterials;2022-03-21

4. Tunable digital-to-analog switching in Nb2O5-based resistance switching devices by oxygen vacancy engineering;Applied Surface Science;2022-03

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