Reliable RRAM devices utilizing sol-gel derived amorphous Ce2Ti2O7 thin films
Author:
Funder
Ministry of Science and Technology, Taiwan
National Cheng Kung University
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials
Reference37 articles.
1. Overview of resistive random access memory (RRAM): materials, filament mechanisms, performance optimization, and prospects;Wang;Phys. Status Solidi (RRL) Rapid Res. Lett.,2019
2. Negative differential resistance effect and dual bipolar resistive switching properties in a transparent Ce-based devices with opposite forming polarity;Ismail;Appl. Surf. Sci.,2020
3. Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications;Ossorio;Solid State Electron.,2021
4. Compact modeling of complementary resistive switching devices using memdiodes;Miranda;IEEE Trans. Electron Devices,2019
5. Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications;Tseng;J. Alloy. Compd.,2022
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