An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration-Reference-Cited by-同舟云学术

An explicit current–voltage model for undoped double-gate MOSFETs based on accurate yet analytic approximation to the carrier concentration

Published:2007-01 Issue:1 Volume:51 Page:179-185
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

He Jin,Bian Wei,Tao Yadong,Liu Feng,Lu Kailiang,Wu Wen,Wang Ting,Chan Mansun

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Double-gate silicon-on-insulator transistor with volume inversion: a new device with greatly enhanced performance;Balestra;IEEE Electr Dev Lett,1987

2. Tanaka T, Suzuki K, Horie H, Sugii T. Ultrafast low-power operation of p–n double-gate SOI MOSFETs, In: Proc VLSI Technol Symp Tech Dig 1994. p. 11–4.

3. Mugnaini G, Iannaccone G. Physics-based compact model of nanoscale MOSFETs—part I: transition from drift-diffusion to ballistic transport. IEEE Trans Electron Dev 2005; ED-52 (August 8): 1795–1801.

4. The impact of scaling on volume inversion in symmetric double-gate MOSFETs;Lin;ISDRS,2003

5. The process/physics-based compact model for non-classical CMOS device and circuit design;Fossum;Solid State Electron,2004

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