Computing Surface Potential and Drain Current in Nanometric Double-Gate MOSFET Using Ortiz-Conde Model
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Publisher
Springer Singapore
Link
http://link.springer.com/content/pdf/10.1007/978-981-13-1540-4_5
Reference20 articles.
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2. Impact of Negative Bottom Gate Voltage for Improvement of RF/Analog Performance in Asymmetric Junctionless Dual Material Double Gate MOSFET;Lecture Notes in Electrical Engineering;2022
3. Effect of high-K dielectric on differential conductance and transconductance of ID-DG MOSFET following Ortiz-Conde model;Microsystem Technologies;2019-08-22
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