Impact of Negative Bottom Gate Voltage for Improvement of RF/Analog Performance in Asymmetric Junctionless Dual Material Double Gate MOSFET-Reference-Cited by-同舟云学术

Impact of Negative Bottom Gate Voltage for Improvement of RF/Analog Performance in Asymmetric Junctionless Dual Material Double Gate MOSFET

Published:2022 Issue: Volume: Page:153-162
ISSN:1876-1100
Container-title:Lecture Notes in Electrical Engineering
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Author:

Basak Arighna,Deyasi Arpan,Sarkar Angsuman

Publisher

Springer Nature Singapore

Link

https://link.springer.com/content/pdf/10.1007/978-981-19-6301-8_12

Reference45 articles.

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4. Chiang TK (2016) A short-channel-effect-degraded noise margin model for junctionless double-gate MOSFET Working on subthreshold CMOS logic gates. IEEE Trans Electron Devices 63

5. Hong S (2019) Compact charge modeling of double-gate MOSFETs considering the density-gradient equation. IEEE J Electron Devices Soc 7

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1. Impact of underlap layer on DC and RF/analog performance of asymmetric junctionless dual material double gate MOSFET for low-power analog amplifier design;Physica Scripta;2024-08-09

2. Gate-to-Source Leakage Current Computation in Symmetric Double Gate MOSFET incorporating Short Channel Effects;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07