Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices-Reference-Cited by-同舟云学术

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Substrate current, gate current and lifetime prediction of deep-submicron nMOS devices

Published:2005-03 Issue:3 Volume:49 Page:505-511
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Cui Zhi,Liou Juin J.,Yue Yun,Wong Hei

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs;Lee;IEEE Trans Electron Dev,2002

2. Tunneling into interface States as reliability monitor for ultrathin oxides;Ghetti;IEEE Trans Electron Dev,2000

3. 1.5nm direct-tunnelling gate oxide Si MOSFET’s;Momose;IEEE Trans Electron Dev,1996

4. The correlation between gate current and substrate current in 0.1μm NMOFET’s;Hu;IEEE Electron Dev Lett,1994

5. Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETs;Heremans;IEEE Trans Electron Dev,1988

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1. Reliability of Laser Diodes for High-rate Optical Communications – A Monte Carlo-based Method to Predict Lifetime Distributions and Failure Rates in Operating Conditions;Advanced Laser Diode Reliability;2021

2. Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors;Microelectronics Reliability;2009-01

3. Kinetic investigation of electron–electron scattering in nanometer-scale metal- oxide-semiconductor field-effect transistors;Semiconductor Science and Technology;2008-02-07

4. On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors;Microelectronic Engineering;2006-10

5. Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 µm Technology;Japanese Journal of Applied Physics;2006-04-25

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