Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 µm Technology-Reference-Cited by-同舟云学术

Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 µm Technology

Published:2006-04-25 Issue:4B Volume:45 Page:3144-3146
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lin Jung-Chun,Chen Shuang-Yuan,Chen Hung-Wen,Jhou Ze-Wei,Lin Hung-Chuan,Chou Sam,Ko Joe,Lei Tien-Fu,Haung Heng-Sheng

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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