The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress-Reference-Cited by-同舟云学术

The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Published:2009-04-20 Issue:4 Volume:48 Page:04C009
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Shuang-Yuan,Chen Hung-Wen,Liu Chuan-Hsi,Cheng Li-Wei

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference8 articles.

1. Charge Trapping at Deep States in Hf–Silicate Based High-κ Gate Dielectrics

2. Interfaces and defects of high-K oxides on silicon

3. Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90nm node MOSFETs

4. Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 µm Technology

5. Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 µm Technology

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