A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors-Reference-Cited by-同舟云学术

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A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors

Published:2012-11-05 Issue: Volume:51 Page:116602
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Djezzar Boualem,Tahi Hakim,Benabdelmoumene Abdelmadjid,Chenouf Amel,Kribes Youcef

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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