Author:
Ruiz-Palmero José M.,Hammer Urs,Jäckel Heinz,Liu Honggang,Bolognesi C.R.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference68 articles.
1. InP/InGaAs SHBTs with 75nm collector and ft>500GHz;Hafez;Electron Lett,2003
2. InGaAs–InP DHBTs for increased digital IC bandwidth having a 391-GHz ft and 505-GHz fmax;Griffith;IEEE Electron Dev Lett,2005
3. High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100mm InP substrates using PH3 and AsH3;Liu;J Crystal Growth,2004
4. Yi S-S, Chung S-J, Rohdin H, Bour M-H-D, Moll N, Chamberlin D-R, et al. Growth and device performance of InP/GaAsSb HBTs. In: IPRM conference proceedings; 2003. p. 380–4.
5. Self-aligned InP DHBT with ft and fmax over 300GHz in a new manufacturable technology;Gang;IEEE Electron Dev Lett,2004
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献