RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Abstract

Abstract This letter presents the fabrication of InP double heterojunction bipolar transistors (DHBTs) on a 3-inch flexible substrate with various thickness values of the benzocyclobutene (BCB) adhesive bonding layer, the corresponding thermal resistance of the InP DHBT on flexible substrate is also measured and calculated. InP DHBT on a flexible substrate with 100 nm BCB obtains cut-off frequency f T = 358 GHz and maximum oscillation frequency f MAX = 530 GHz. Moreover, the frequency performance of the InP DHBT on flexible substrates at different bending radii are compared. It is shown that the bending strain has little effect on the frequency characteristics (less than 8.5%), and these bending tests prove that InP DHBT has feasible flexibility.