1. Driad, R., Makon, R.E., Hurn, V., Benkhelifa, F., Lösch, R., Rosenzweig, J., Schlechtweg, M.: InP-based DHBT technology for high-speed mixed signal and digital applications. IPRM 09, 10–15 (2009)
2. Urteaga, M., Seo, M., Hacker, J., Griffith, Z., Young, A., Pierson, R., Rowell, P., Akalare, A., Jain, V., Lobisser, E., Rodwell, M.J.W.: InP HBTs for THz frequency integrated circuits. In: 23rd International Conference of IPRM (2011)
3. Urteaga, M., Pierson, R., Rowell, P., Jain, V., Lobisser, E., Rodwell, M.J.W.: 130 nm InP DHBTs with 130 nm InP DHBTs with f $$_{{\rm T}} > 0.52$$ T > 0.52 THz and f $$_{{\rm max}} >1.1$$ max > 1.1 THz. In: 69th Annual device research conference, pp. 281–282 (2011)
4. Snodgrass, W., Hafez, W., Harff, N., Feng, M.: Pseudomorfic InP/InGaAs heterojunction bipolar transistors (PHBTs) experimentally demonstrating f $$_{{\rm T}} =765$$ T = 765 GHz at $$25^{\circ }$$ 25 ∘ C increasing to f $$_{{\rm T}}=845$$ T = 845 GHz at $$-55^{\circ }$$ - 55 ∘ C. In: IEDM’06 (2006)
5. Feng, M., Snodgrass, W.: InP pseudomorphic heterojunction bipolar transistor (PHBT) with f $$_{T}>750$$ T > 750 GHz. In: 19 International conference IPRM’14, pp. 399–402 (2007)