Author:
Zekry A.,Shaker A.,Ossaimee M.,Salem M. S.,Abouelatta M.
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Hutchinson, C., Frank, M., Negus, K.: Silicon Bipolar 12 GHz down converter for satellite receivers. In: Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, (BCTM) 198–201 (1995)
2. Nakamura, T., Nishizawa, H.: Recent progress in bipolar transistor technology. IEEE Trans. Electron Devices 42(3), 390–398 (1995)
3. Wagner, C., Schuster, J., Gessner, T.: Empirical transport model of strained CNT transistors used for sensor applications. J. Comput. Electron. 15(3), 881–890 (2016)
4. Sedra, A.S., Smith, K.C.: Microelectronic Circuits. Oxford University Press, New York (2014)
5. Warnock, J.D.: Silicon bipolar device structures for digital applications: technology trends and future directions. IEEE Trans. Electron Devices 42(3), 377–389 (1995)
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