InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max/
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/30007/01372680.pdf?arnumber=1372680
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InGaAsPBi grown on InP substrate by gas source molecular beam epitaxy;Materials Research Express;2021-02-01
2. Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy;Journal of Materials Science;2017-10-31
3. Determining the base resistance of InP HBTs: An evaluation of methods and structures;Solid-State Electronics;2016-09
4. Fabrication and small signal modeling of 0.5 μm InGaAs/InP DHBT demonstratingFT/Fmaxof 350/532 GHz;Microwave and Optical Technology Letters;2015-09-26
5. A 1–20-GHz All-Digital InP HBT Optical Wavelength Synthesis IC;IEEE Transactions on Microwave Theory and Techniques;2013-01
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