Study on the influence of γ-ray total dose radiation effect on the electrical properties of the uniaxial strained Si nanometer NMOSFET-Reference-Cited by-同舟云学术

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Study on the influence of γ-ray total dose radiation effect on the electrical properties of the uniaxial strained Si nanometer NMOSFET

Published:2017-07 Issue: Volume:133 Page:45-52
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hao Minru,Hu Huiyong,Wang Bin,Liao Chenguang,Kang Haiyan,Su Han

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

2. Contact Resistance Reduction for Strained N-MOSFETs With Silicon-Carbon Source/Drain Utilizing Aluminum Ion Implant and Aluminum Profile Engineering

3. Analytical model for quasi-static C–V characteristics of strained-Si/SiGe pMOS capacitor

4. Modeling of the effect of uniaxial mechanical strain on drain current and threshold voltage of an n-type MOSFET

5. Radiation Effects in MOS Oxides

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel layout technique for single-event transient mitigation by the groove structure;Radiation Effects and Defects in Solids;2024-07-10

2. Total ionizing dose hardness analysis of transistors in commercial 180 nm CMOS technology;Microelectronics Journal;2021-09

3. Effects of Total Dose Radiation on Single Event Effect of the Uniaxial Strained Si Nano NMOSFET;IETE Journal of Research;2021-01-18

4. An overview of radiation effects on electronic devices under severe accident conditions in NPPs, rad-hardened design techniques and simulation tools;Progress in Nuclear Energy;2019-07

5. Total Dose Radiation Response of Capacitance Characteristic for Nano-scale NMOS;IETE Journal of Research;2019-01-15

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