Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation-Reference-Cited by-同舟云学术

Comparative Analysis of Mechanical Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

Published:2014-08 Issue:4 Volume:61 Page:1628-1634
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Gaillardin M.,Raine M.,Duhamel O.,Girard S.,Paillet P.,McMorrow D.,Warner J. H.,Andrieu F.,Barraud S.,Faynot O.,Roche N. J.-H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/6878498/06835202.pdf?arnumber=6835202

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