On performance scaling and speed of junctionless transistors-Reference-Cited by-同舟云学术

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On performance scaling and speed of junctionless transistors

Published:2013-01 Issue: Volume:79 Page:18-21
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Koukab A.,Jazaeri F.,Sallese J.-M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Nanowire transistors without junctions

2. Nanowire transistors made easy

3. Nonvolatile Memory by All-Around-Gate Junctionless Transistor Composed of Silicon Nanowire on Bulk Substrate

4. Analytical and self-consistent quantum mechanical model for a surrounding gate MOS nanowire operated in JFET mode

5. Junctionless Nanowire Transistor (JNT): Properties and design guidelines

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1. A pathway to improve short channel effects of junctionless based FET’s after incorporating technology boosters: a review;Engineering Research Express;2024-02-26

2. Non‐uniform doping dependent electrical parameters of dual‐metal gate all around junctionless accumulation‐mode nanowire FET (DMGAA‐JAM‐NWFET);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-01-10

3. Performance optimization of electrically variable double gate junctionless transistor with HfO2 gate dielectric;Materials Today: Proceedings;2023

4. Analytical Model of Conventional and Rectangular Core-Shell-based Double Gate Junctionless MOS;IETE Journal of Research;2022-11-16

5. Design and Analysis of Recessed Double Gate Junctionless Field-Effect-Transistor Based Digital Standard Cells;Silicon;2022-04-08

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