Design and Analysis of Recessed Double Gate Junctionless Field-Effect-Transistor Based Digital Standard Cells
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01874-6.pdf
Reference41 articles.
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1. Analytical modeling of recessed double gate junctionless field‐effect‐transistor in subthreshold region;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-01-18
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