Analytical Model of Conventional and Rectangular Core-Shell-based Double Gate Junctionless MOS-Reference-Cited by-同舟云学术

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Analytical Model of Conventional and Rectangular Core-Shell-based Double Gate Junctionless MOS

Published:2022-11-16 Issue: Volume: Page:1-13
ISSN:0377-2063
Container-title:IETE Journal of Research
language:en
Short-container-title:IETE Journal of Research

Author:

Narula Vishal¹,Agarwal Mohit²

Affiliation:

1. Department of Electronics and Electrical Engineering, Lovely Professional University Jalandhar, Phagwara, 144402, Punjab, India

2. Department of Electronics and Communication Engineering, Thapar Institute of Engineering & Technology, Patiala, 147004, Punjab, India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Science Applications,Theoretical Computer Science

Link

https://www.tandfonline.com/doi/pdf/10.1080/03772063.2022.2138582

Reference34 articles.

1. D. Quercia. Short channel effects in MOSFETs Vlsi Design 1–15, 2000.

2. Analysis of Short-Channel Effects in Junctionless DG MOSFETs

3. Highly suppressed short-channel effects in ultrathin SOI n-MOSFETs

4. Gate All Around MOSFET With Vacuum Gate Dielectric for Improved Hot Carrier Reliability and RF Performance

5. Comparative Analysis of Various Parameters of Tri-Gate MOSFET with High-K Spacer

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1. A pathway to improve short channel effects of junctionless based FET’s after incorporating technology boosters: a review;Engineering Research Express;2024-02-26

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