High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies-Reference-Cited by-同舟云学术

High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies

Published:2023-07 Issue: Volume:205 Page:108656
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Nyssens L.,Rack M.,Nabet M.,Schwan C.,Zhao Z.,Lehmann S.,Herrmann T.,Henke D.,Kondrat A.,Soonekindt C.,Koch F.,Kache T.,Kini D.P.,Zimmerhackl O.,Allibert F.,Aulnette C.,Lederer D.,Raskin J.-P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. A 22nm FDSOI Technology Optimized for RF/mmWave Applications;Ong,2018

2. (Invited) SOI Technologies for RF and Millimeter Wave Applications;Rack;ECS Trans,2019

3. SiO/sub 2/ interface layer effects on microwave loss of high-resistivity CPW line;Yunhong;IEEE Microwave Guided Wave Letters,1999

4. Modeling of Semiconductor Substrates for RF Applications: Part I—Static and Dynamic Physics of Carriers and Traps;Rack;IEEE Trans Electron Devices,2021

5. Low-Loss Si-Substrates Enhanced Using Buried PN Junctions for RF Applications;Rack;IEEE Electron Device Lett,2019

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure and RF performance evolution of polycrystalline silicon charge capture layer for advanced RF-SOI in in-situ annealing process;Materials Science in Semiconductor Processing;2024-07

2. Various RF Substrate Solutions for 22 nm FD-SOI Technology Targeting Cryogenic Applications;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16