Modeling of Semiconductor Substrates for RF Applications: Part I—Static and Dynamic Physics of Carriers and Traps

Author:

Rack M.ORCID,Allibert F.ORCID,Raskin J.-P.ORCID

Funder

Ecsel JU Project Beyond5 through EUH2020 and Innoviris

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies;Solid-State Electronics;2023-07

2. Substrate noise mitigation using high resistivity base silicon wafer for a 14 GHz VCO on 28 nm FD-SOI;2023 21st IEEE Interregional NEWCAS Conference (NEWCAS);2023-06-26

3. High Resistivity Trap-Rich Substrate for RF MEMS Switches;2023 Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP);2023-05-28

4. Double Buried Oxide Trap-Rich Substrates for High Frequency Applications;IEEE Electron Device Letters;2023-04

5. Novel Harmonic Distortion Analysis Method Using Ramo-Shockley Theorem;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

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